HSD313 Datasheet, Equivalent, Cross Reference Search
Type Designator: HSD313
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-220AB
HSD313 Transistor Equivalent Substitute - Cross-Reference Search
HSD313 Datasheet (PDF)
..1. Size:52K hsmc
hsd313.pdf
hsd313.pdf
Spec. No. : HE6728HI-SINCERITYIssued Date : 1993.04.12Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HSD313NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD313 is designed for use in general purpose amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...................................
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
