HSD313 Specs and Replacement
Type Designator: HSD313
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-220AB
HSD313 Substitution
- BJT ⓘ Cross-Reference Search
HSD313 datasheet
Spec. No. HE6728 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HSD313 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD313 is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ...................................... See More ⇒
Detailed specifications: HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , BD135 , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 , HSD882S , HSD965 .
History: HI117 | HM5401 | HS882 | HIT667 | HIT468 | HS600K | BD313
Keywords - HSD313 pdf specs
HSD313 cross reference
HSD313 equivalent finder
HSD313 pdf lookup
HSD313 substitution
HSD313 replacement
