All Transistors. HSD313 Datasheet

 

HSD313 Datasheet and Replacement


   Type Designator: HSD313
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-220AB
 

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HSD313 Datasheet (PDF)

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HSD313

Spec. No. : HE6728HI-SINCERITYIssued Date : 1993.04.12Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HSD313NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD313 is designed for use in general purpose amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...................................

Datasheet: HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , BD135 , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 , HSD882S , HSD965 .

Keywords - HSD313 transistor datasheet

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