All Transistors. HSD879 Datasheet

 

HSD879 Datasheet and Replacement


   Type Designator: HSD879
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO-92
 

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HSD879 Datasheet (PDF)

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HSD879

Spec. No. : HA200207HI-SINCERITYIssued Date : 1996.07.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/4HSD879SILICON NPN EPITAXIAL TYPE TRANSISTORDescriptionFor 1.5V and 3v electronic flash use.TO-92Features Charger-up time is about 1 ms faster than of a germanium transistor Small saturation voltage can bring less power dissipation and flashing time

Datasheet: HSD1609 , HSD1609S , HSD1616A , HSD313 , HSD468 , HSD667A , HSD669A , HSD669AT , BC558 , HSD882 , HSD882S , HSD965 , HT112 , HT117 , HT772 , HT882 , HTIP112 .

Keywords - HSD879 transistor datasheet

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