HSD879 Specs and Replacement
Type Designator: HSD879
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Package: TO-92
HSD879 Substitution
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HSD879 datasheet
Spec. No. HA200207 HI-SINCERITY Issued Date 1996.07.15 Revised Date 2005.02.15 MICROELECTRONICS CORP. Page No. 1/4 HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features Charger-up time is about 1 ms faster than of a germanium transistor Small saturation voltage can bring less power dissipation and flashing time... See More ⇒
Detailed specifications: HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, HSD669A, HSD669AT, 2SD313, HSD882, HSD882S, HSD965, HT112, HT117, HT772, HT882, HTIP112
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