All Transistors. HSD879 Datasheet

 

HSD879 Datasheet and Replacement


   Type Designator: HSD879
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO-92
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HSD879 Datasheet (PDF)

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HSD879

Spec. No. : HA200207HI-SINCERITYIssued Date : 1996.07.15Revised Date : 2005.02.15MICROELECTRONICS CORP.Page No. : 1/4HSD879SILICON NPN EPITAXIAL TYPE TRANSISTORDescriptionFor 1.5V and 3v electronic flash use.TO-92Features Charger-up time is about 1 ms faster than of a germanium transistor Small saturation voltage can bring less power dissipation and flashing time

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CP380 | 3DD3040_A1 | 3DD13007_X1 | GES6004 | 3DD128F_H3D | ZXTP2012A | 3DD13001B

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