All Transistors. HSD965 Datasheet

 

HSD965 Datasheet and Replacement


   Type Designator: HSD965
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: TO-92
 

 HSD965 Substitution

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HSD965 Datasheet (PDF)

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HSD965

Spec. No. : HE6537HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.11.30MICROELECTRONICS CORP.Page No. : 1/4HSD965NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD965 is suited for use as AF output amplifier and flash unit.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ....................................................................

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CSBD135A | 2N6111 | JC557A

Keywords - HSD965 transistor datasheet

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