HSD965 Specs and Replacement
Type Designator: HSD965
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Package: TO-92
HSD965 Substitution
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HSD965 datasheet
Spec. No. HE6537 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.11.30 MICROELECTRONICS CORP. Page No. 1/4 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ....................................................................... See More ⇒
Detailed specifications: HSD313, HSD468, HSD667A, HSD669A, HSD669AT, HSD879, HSD882, HSD882S, SS8050, HT112, HT117, HT772, HT882, HTIP112, HTIP117, HTIP122, HTIP127
Keywords - HSD965 pdf specs
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