HT112 Specs and Replacement
Type Designator: HT112
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO-126
HT112 Substitution
- BJT ⓘ Cross-Reference Search
HT112 datasheet
Spec. No. HT200101 HI-SINCERITY Issued Date 2000.05.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/5 HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and low-speed switching applications. TO-126 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................ See More ⇒
Detailed specifications: HSD468, HSD667A, HSD669A, HSD669AT, HSD879, HSD882, HSD882S, HSD965, 8550, HT117, HT772, HT882, HTIP112, HTIP117, HTIP122, HTIP127, HTIP41C
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