All Transistors. HT112 Datasheet

 

HT112 Datasheet and Replacement


   Type Designator: HT112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-126
 

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HT112 Datasheet (PDF)

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HT112

Spec. No. : HT200101HI-SINCERITYIssued Date : 2000.05.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/5HT112NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HT112 is designed for use in general purpose amplifier and low-speedswitching applications.TO-126Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature .........................

Datasheet: HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 , HSD882S , HSD965 , D209L , HT117 , HT772 , HT882 , HTIP112 , HTIP117 , HTIP122 , HTIP127 , HTIP41C .

History: RJH6674 | HSE911 | 2SD758 | PMD9050D | SPS8550 | BUL1102E | B772O

Keywords - HT112 transistor datasheet

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