HT117 Specs and Replacement
Type Designator: HT117
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO-126
HT117 Substitution
- BJT ⓘ Cross-Reference Search
HT117 datasheet
Spec. No. HT200207 HI-SINCERITY Issued Date 2002.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HT117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126 The HT117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temperatu... See More ⇒
Detailed specifications: HSD667A, HSD669A, HSD669AT, HSD879, HSD882, HSD882S, HSD965, HT112, 9014, HT772, HT882, HTIP112, HTIP117, HTIP122, HTIP127, HTIP41C, HTIP42C
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