CD8550D Datasheet. Specs and Replacement

Type Designator: CD8550D  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO-92

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CD8550D datasheet

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CD8550D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 25 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 2.0 A Collector Power Dissipation PC 1.0 W Operating And Storage Ju... See More ⇒

Detailed specifications: CD2328Y, CD2383, CD2383O, CD2383R, CD2383Y, CD8550, CD8550B, CD8550C, BD139, CD9011, CD9011D, CD9011E, CD9011F, CD9011G, CD9011H, CD9011I, CD9011J

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