C45C11 Specs and Replacement
Type Designator: C45C11
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-220
C45C11 Substitution
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C45C11 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL C45C5 C45C11 UNIT Collector -Emitter Voltage VCEO 45 80 V Collector -Emitter Voltage VCES 55 90 V Emitter Base Voltage VE... See More ⇒
Detailed specifications: BF469, C13003, C2688BPL, C42C2, C43C2, C44C11, C44C8, C44VH10, C1815, C45C5, C45C8, CD13003, CD13003D, CD3968, CDB1370, CDB1370EF, CDD1933
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