All Transistors. CDB1370 Datasheet

 

CDB1370 Datasheet and Replacement


   Type Designator: CDB1370
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-126
 

 CDB1370 Substitution

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CDB1370 Datasheet (PDF)

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CDB1370

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR CDB1370EF(9AW)TO126MARKING: CDB1370EFLow Freq. Power Amp.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 5 VCollector Current Con

Datasheet: C44C8 , C44VH10 , C45C11 , C45C5 , C45C8 , CD13003 , CD13003D , CD3968 , D882 , CDB1370EF , CDD1933 , CDD2061 , CDD2395 , CDL6718 , CFA1012 , CFA1012O , CFA1012Y .

Keywords - CDB1370 transistor datasheet

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