CDB1370EF Specs and Replacement
Type Designator: CDB1370EF
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-126
CDB1370EF Substitution
- BJT ⓘ Cross-Reference Search
CDB1370EF datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CDB1370EF (9AW) TO126 MARKING CDB 1370 EF Low Freq. Power Amp. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current Con... See More ⇒
Detailed specifications: C44VH10, C45C11, C45C5, C45C8, CD13003, CD13003D, CD3968, CDB1370, S8050, CDD1933, CDD2061, CDD2395, CDL6718, CFA1012, CFA1012O, CFA1012Y, CFB1342
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