CFB810 Datasheet and Replacement
Type Designator: CFB810
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 110 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-220FP
CFB810 Substitution
CFB810 Datasheet (PDF)
cfb810.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFB810(9AW)TO-220FP MARKING:- CFB810Designed for Relay Drive and Motor DriveABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 110 VCollector -Emitter Voltage VCEO 110 VEmitter Base Voltage VEB
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Keywords - CFB810 transistor datasheet
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CFB810 equivalent finder
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History: 2SC5305 | 2SC1599



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