CFB810 Specs and Replacement
Type Designator: CFB810
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 110 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO-220FP
CFB810 Substitution
- BJT ⓘ Cross-Reference Search
CFB810 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CFB810 (9AW) TO-220FP MARKING - CFB 810 Designed for Relay Drive and Motor Drive ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 110 V Collector -Emitter Voltage VCEO 110 V Emitter Base Voltage VEB... See More ⇒
Detailed specifications: CDD2395, CDL6718, CFA1012, CFA1012O, CFA1012Y, CFB1342, CFB1370, CFB612, 2N3906, CFD1933, CFD611, CFD811, CJF122, CJF127, CJF15028, CJF15029, CJF15030
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