CL100S Datasheet, Equivalent, Cross Reference Search
Type Designator: CL100S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-39
CL100S Transistor Equivalent Substitute - Cross-Reference Search
CL100S Datasheet (PDF)
cl100s ck100s.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR TRANSISTORS CL100S NPNCK100S PNPTO-39ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 50 VCollector -Base Voltage VCBO 60 VEmitter Base Voltage VEBO 5.0 VCollector Current ICM 1.0 APower Dissipation @ Ta=25 deg C PD 800 mWDe
cl100 ck100 a b.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER TRANSISTORS CL100, A, B NPNCK100, A, B PNPTO-39Metal Can PackageMedium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCERCollector Emitter Voltage 50 VVCBOCo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
