All Transistors. CMBA847G Datasheet

 

CMBA847G Datasheet and Replacement


   Type Designator: CMBA847G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: SOT-23
 

 CMBA847G Substitution

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CMBA847G Datasheet (PDF)

 7.1. Size:129K  cdil
 cmba847.pdf pdf_icon

CMBA847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3 MARKING : AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 50 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEB

 9.1. Size:129K  cdil
 cmba857.pdf pdf_icon

CMBA847G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857SOT23PIN CONFIGURATION (PNP)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING : AS BELOW12ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO

Datasheet: CL100B , CL100S , CLB764 , CLD667 , CLD667A , CLD863 , CMBA847E , CMBA847F , TIP127 , CMBA857E , CMBA857F , CMBT200 , CMBT200A , CMBT2369 , CMBT2484 , CMBT4123 , CMBT4124 .

History: BC383C | BC638 | KSP24 | NPS3564 | BSR40 | BDX65A | 3CA885

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