CMBT4401 Datasheet. Specs and Replacement
Type Designator: CMBT4401 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT-23
CMBT4401 Substitution
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CMBT4401 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N P N transistor Marking PACKAGE OUTLINE DETAILS CMBT4401 = 2X ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector emitter voltage VCEO max. 40 V C... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P N P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector emitter voltage VCEO max. 40 V Collector current (DC) I max. 600 mA C D... See More ⇒
Detailed specifications: CMBT200, CMBT200A, CMBT2369, CMBT2484, CMBT4123, CMBT4124, CMBT4125, CMBT4126, 2222A, CMBT4403, CMBT5087, CMBT5088, CMBT5089, CMBT5400, CMBT5401, CMBT5550, CMBT5551
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