CNL637 Specs and Replacement

Type Designator: CNL637

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-92

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CNL637 datasheet

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 cnl635 cpl636 cnl637 cpl638 cnl639 cpl640.pdf pdf_icon

CNL637

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CNL635 CPL636 CNL637 CPL638 CNL639 CPL640 NPN PNP TO-92 Plastic Package E CB Suitable for Driver Stage of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Otherwise Specified) CNL635 CNL637 CNL639 DESCRIPTION SYMBOL UNIT CPL636 CPL638 CPL640 Col... See More ⇒

Detailed specifications: CN657, CN8050, CN8050C, CN8050D, CN8550, CN8550C, CN8550D, CNL635, 2SD2499, CNL639, CO38P, CP107, CP1342, CP4, CP500, CP501, CP502

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