CSB1116A Specs and Replacement
Type Designator: CSB1116A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO-92
CSB1116A Substitution
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CSB1116A datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116 CSB1116A TO-92 BCE B C E Audio Frequency Power Amplifier And Medium Speed Switching Complementary CSD1616/1616A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL CSB1116 CSB1116A UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitt... See More ⇒
Detailed specifications: CSA988F, CSA988P, CSAL1013, CSAL928A, CSB1058, CSB1058A, CSB1058B, CSB1116, TIP41C, CSB1116G, CSB1116L, CSB1116Y, CSB1181, CSB1182, CSB1184, CSB1272, CSB1370
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