All Transistors. CSB1116L Datasheet

 

CSB1116L Datasheet and Replacement


   Type Designator: CSB1116L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO-92
 

 CSB1116L Substitution

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CSB1116L Datasheet (PDF)

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CSB1116L

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116CSB1116ATO-92BCEBCEAudio Frequency Power Amplifier And Medium Speed SwitchingComplementary CSD1616/1616AABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)DESCRIPTION SYMBOL CSB1116 CSB1116A UNITCollector -Base Voltage VCBO 60 80 VCollector -Emitt

Datasheet: CSAL1013 , CSAL928A , CSB1058 , CSB1058A , CSB1058B , CSB1116 , CSB1116A , CSB1116G , 2N3055 , CSB1116Y , CSB1181 , CSB1182 , CSB1184 , CSB1272 , CSB1370 , CSB1370D , CSB1370E .

History: 2SD2122L

Keywords - CSB1116L transistor datasheet

 CSB1116L cross reference
 CSB1116L equivalent finder
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