CSB1116L Specs and Replacement
Type Designator: CSB1116L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO-92
CSB1116L Substitution
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CSB1116L datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116 CSB1116A TO-92 BCE B C E Audio Frequency Power Amplifier And Medium Speed Switching Complementary CSD1616/1616A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL CSB1116 CSB1116A UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitt... See More ⇒
Detailed specifications: CSAL1013 , CSAL928A , CSB1058 , CSB1058A , CSB1058B , CSB1116 , CSB1116A , CSB1116G , 2N3904 , CSB1116Y , CSB1181 , CSB1182 , CSB1184 , CSB1272 , CSB1370 , CSB1370D , CSB1370E .
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