CSD669 PDF Specs and Replacement
Type Designator: CSD669
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-126
CSD669 Substitution
CSD669 PDF detailed specifications
csb649 a csd669-a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSB649, CSB649A CSD669, CSD669A CSB649, 649A PNP PLASTIC POWER TRANSISTORS CSD669, 669A NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE... See More ⇒
Detailed specifications: CSB631KF , CSB649 , CSB649A , CSB649AB , CSB649AC , CSB649B , CSB649C , CSB649D , 9014 , CSD669A , CSD669AB , CSD669AC , CSD669B , CSD669C , CSD669D , CSB737 , CSB737Q .
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