2N616 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N616
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 56 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
2N616 Transistor Equivalent Substitute - Cross-Reference Search
2N616 Datasheet (PDF)
0.2. Size:15K advanced-semi
2n6166.pdf
2n6166.pdf
2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 LPower Amplifier Applications up to 200 AMHz. E.125 NOM.C FULL RCFEATURES: BE B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F GH Omnigold Metalization Sy
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
