2N616 Specs and Replacement
Type Designator: 2N616
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 56 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
2N616 Substitution
- BJT ⓘ Cross-Reference Search
2N616 datasheet
2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 L Power Amplifier Applications up to 200 A MHz. E .125 NOM. C FULL R C FEATURES B E B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F G H Omnigold Metalization Sy... See More ⇒
Detailed specifications: 2N6131 , 2N6132 , 2N6133 , 2N6134 , 2N6135 , 2N6136 , 2N614 , 2N615 , BC327 , 2N6166 , 2N617 , 2N6175 , 2N6176 , 2N6177 , 2N6178 , 2N6179 , 2N618 .
History: 2N6132 | 2SC4806 | 2SC945-GR | 2N5271 | 2SD2462 | 2N5276 | 2N6129
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