2N6166 Specs and Replacement
Type Designator: 2N6166
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: 211-10
2N6166 Substitution
- BJT ⓘ Cross-Reference Search
2N6166 datasheet
2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 L Power Amplifier Applications up to 200 A MHz. E .125 NOM. C FULL R C FEATURES B E B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F G H Omnigold Metalization Sy... See More ⇒
Detailed specifications: 2N6132 , 2N6133 , 2N6134 , 2N6135 , 2N6136 , 2N614 , 2N615 , 2N616 , A733 , 2N617 , 2N6175 , 2N6176 , 2N6177 , 2N6178 , 2N6179 , 2N618 , 2N6180 .
History: 2SC383TM
Keywords - 2N6166 pdf specs
2N6166 cross reference
2N6166 equivalent finder
2N6166 pdf lookup
2N6166 substitution
2N6166 replacement
