All Transistors. 2N6166 Datasheet

 

2N6166 Datasheet and Replacement


   Type Designator: 2N6166
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: 211-10
 

 2N6166 Substitution

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2N6166 Datasheet (PDF)

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2N6166

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2N6166

2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 LPower Amplifier Applications up to 200 AMHz. E.125 NOM.C FULL RCFEATURES: BE B C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F GH Omnigold Metalization Sy

Datasheet: 2N6132 , 2N6133 , 2N6134 , 2N6135 , 2N6136 , 2N614 , 2N615 , 2N616 , TIP31C , 2N617 , 2N6175 , 2N6176 , 2N6177 , 2N6178 , 2N6179 , 2N618 , 2N6180 .

Keywords - 2N6166 transistor datasheet

 2N6166 cross reference
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