All Transistors. CSD655F Datasheet

 

CSD655F Datasheet and Replacement


   Type Designator: CSD655F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: TO-92
 

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CSD655F Datasheet (PDF)

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CSD655F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655(9AW)TO-92BCEMarking : As BelowABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 30 VCollector -Emitter Voltage VCEO 15 VEmitter Base Voltage VEBO 5.0 VCollector Curre

Datasheet: CSD600K , CSD600KD , CSD600KE , CSD600KF , CSD611 , CSD655 , CSD655D , CSD655E , 2SD1047 , CSD786 , CSD786Q , CSD786R , CSD786S , CSD794 , CSD794A , CSD794AO , CSD794AR .

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