BUF508A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUF508A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO-220FP
BUF508A Transistor Equivalent Substitute - Cross-Reference Search
BUF508A Datasheet (PDF)
buf508a1.pdf
QContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR BUF508ATO-220FP Fully IsolatedPlastic PackageApplicationsHigh voltage, high - speed switching transistor in TO - 220FP package envelope intended for use in horizontal deflection of colour television circuits.ABSOLUTE MAXIMUM RATINGS.D
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .