BUF508A Datasheet. Specs and Replacement
Type Designator: BUF508A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO-220FP
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BUF508A datasheet
Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR BUF508A TO-220FP Fully Isolated Plastic Package Applications High voltage, high - speed switching transistor in TO - 220FP package envelope intended for use in horizontal deflection of colour television circuits. ABSOLUTE MAXIMUM RATINGS. D... See More ⇒
Detailed specifications: 2N23867, 2N3055HV, 2N6371HV, A1941, BD237S, BD675BPL, BF422BPL, BU908F, 2SB688, BUX84A, C5198, CD13002, CD81, CD83, CDL13005, CDL13005D, CDL13005R
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BJT Parameters and How They Relate
History: 2SA950-Y | 2SC636 | 2N3790SMD | 2SC635 | 2SAR293PFRA
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