CJD110 Datasheet. Specs and Replacement
Type Designator: CJD110
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
CJD110 Substitution
- BJT ⓘ Cross-Reference Search
CJD110 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS CJD115 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching Regulators, Converters and Power Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPT... See More ⇒
Detailed specifications: CFD2374A, CFD2374AP, CFD2374AQ, CFD2374P, CFD2374Q, CFD2375, CFD2375P, CFD2375Q, S9014, CJD115, CJD175, CJD176, CJD177, CJD178, CJD179, CJD180, CJD204R
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