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CJD180 Specs and Replacement


   Type Designator: CJD180
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-252 DPAK

 CJD180 Transistor Equivalent Substitute - Cross-Reference Search

   

CJD180 detailed specifications

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CJD180

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175 CJD178 CJD177 CJD180 CJD179 NPN PNP DPAK (TO-252) Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNIT CJD176 CJD178 CJD180 Collector -Emitter V... See More ⇒

Detailed specifications: CFD2375Q , CJD110 , CJD115 , CJD175 , CJD176 , CJD177 , CJD178 , CJD179 , BD335 , CJD204R , CJD3439 , CJD81 , CJD86 , CJE13007 , CJF100 , CJF101 , CJF102 .

Keywords - CJD180 transistor specs

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