CJD81 Datasheet. Specs and Replacement
Type Designator: CJD81
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 140
CJD81 Substitution
- BJT ⓘ Cross-Reference Search
CJD81 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CJD81 DPAK (TO-252) Plastic Package For High Current Driver Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 10 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 3.0... See More ⇒
Detailed specifications: CJD175, CJD176, CJD177, CJD178, CJD179, CJD180, CJD204R, CJD3439, 2SA1837, CJD86, CJE13007, CJF100, CJF101, CJF102, CJF105, CJF106, CJF107
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