All Transistors. CJD81 Datasheet

 

CJD81 Datasheet and Replacement


   Type Designator: CJD81
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO-252 DPAK
 

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CJD81 Datasheet (PDF)

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CJD81

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CJD81DPAK (TO-252)Plastic PackageFor High Current Driver ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 10 VEmitter Base Voltage VEBO 6.0 VCollector Current IC 3.0

Datasheet: CJD175 , CJD176 , CJD177 , CJD178 , CJD179 , CJD180 , CJD204R , CJD3439 , BC546 , CJD86 , CJE13007 , CJF100 , CJF101 , CJF102 , CJF105 , CJF106 , CJF107 .

History: 2SC1191

Keywords - CJD81 transistor datasheet

 CJD81 cross reference
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