CP757 Datasheet. Specs and Replacement
Type Designator: CP757
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-92
CP757 Substitution
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CP757 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CP756 / CP757 PNP SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package C B E Medium Power Transistors are Designed for Applications Requiring High Breakdown Voltage and Low Saturation Voltage Complementary CN656 and CN657 ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL CP756 CP75... See More ⇒
Detailed specifications: CJF106, CJF107, CMBTA42, CMBTA44, CMBTA92, CN1016, CP1016, CP756, C3198, CRD13003BC, CSA1156, CSA1162GR, CSA1162Y, CSA1301F, CSA1301OF, CSA1301RF, CSA1302F
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