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CSB1086P Specs and Replacement


   Type Designator: CSB1086P
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 1.5 A
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: TO-126

 CSB1086P Transistor Equivalent Substitute - Cross-Reference Search

   

CSB1086P detailed specifications

 9.1. Size:229K  cdil
 csb1065.pdf pdf_icon

CSB1086P

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB1065 TO126 Plastic Package E C B Complementary CSD1506 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b... See More ⇒

 9.2. Size:235K  cdil
 csb1058.pdf pdf_icon

CSB1086P

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1058 TO-92 BCE B C E Low Frequency Power Amplifier. Complementary CSD1489 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter Voltage BVCEO 16 V Emitter B... See More ⇒

Detailed specifications: CSB1065R , CSB1086 , CSB1086A , CSB1086AN , CSB1086AP , CSB1086AQ , CSB1086B , CSB1086N , A1015 , CSB1086Q , CSB1086R , CSB507 , CSB507C , CSB507D , CSB507E , CSB507F , CSB624 .

Keywords - CSB1086P transistor specs

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