CSB507 Specs and Replacement
Type Designator: CSB507
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-220
CSB507 Transistor Equivalent Substitute - Cross-Reference Search
CSB507 detailed specifications
csb507 csd313.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507, CSD313 CSB507 PNP PLASTIC POWER TRANSISTOR CSD313 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83... See More ⇒
Detailed specifications: CSB1086AN , CSB1086AP , CSB1086AQ , CSB1086B , CSB1086N , CSB1086P , CSB1086Q , CSB1086R , TIP3055 , CSB507C , CSB507D , CSB507E , CSB507F , CSB624 , CSB817F , CSB817OF , CSB817YF .
History: 2SD1267A | UMT1008 | 2SB744
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