CSB817F Datasheet, Equivalent, Cross Reference Search
Type Designator: CSB817F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-3P
CSB817F Transistor Equivalent Substitute - Cross-Reference Search
CSB817F Datasheet (PDF)
csb817f.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP POWER TRANSISTOR CSB 817FTO 3PPlastic PackageBCEComplementary CSD1047FAudio Power Amplifier and DC to DC ConverterABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL MIN TYP MAX UNITCollector -Base Voltage(open emitter) VCBO 160 VCollector -Emitter
csb810.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CSB810(9AW)TO-220 MARKING : CSB810Designed for Relay Drive and Motor DriveABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 110 VCollector -Emitter Voltage VCEO 110 VEmitter Base Voltage VEBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
