CSB856C Datasheet, Equivalent, Cross Reference Search
Type Designator: CSB856C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-220
CSB856C Transistor Equivalent Substitute - Cross-Reference Search
CSB856C Datasheet (PDF)
csb856.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP PLASTIC POWER TRANSISTOR CSB856TO-220Plastic PackageLOW FREQUENCY POWER AMPLIFIERABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector -Emitter Voltage 50 VVCBOCollector -Base Voltage 50 VVEBOEmitter Base Voltage 4.0 VICCollector Current Continuous 3.0 APDP
csb857 csb858 csd1133 34.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSB857, CSB858CSD1133, CSD1134CSB857, 858 PNP PLASTIC POWER TRANSISTORSCSD1133, 1134 NPN PLASTIC POWER TRANSISTORSLow frequency Power AmplifierPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
