CSD2495 Specs and Replacement
Type Designator: CSD2495
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Collector Current |Ic max|: 6 A
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO-220
CSD2495 Substitution
- BJT ⓘ Cross-Reference Search
CSD2495 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 15 V VCEO Collector Emitter Voltage 10 V VEBO Emitter Base Voltage 7.0 V IC Collector Current 5.0 A *ICP Collector Current Peak... See More ⇒
Detailed specifications: CSD1563Q, CSD1563R, CSD1616, CSD1616G, CSD1616L, CSD1616Y, CSD1638, CSD1833, 2SD2499, CSD545, CSD545D, CSD545E, CSD545F, CSD545G, CSL13002, MZT122, MZT127
Keywords - CSD2495 pdf specs
CSD2495 cross reference
CSD2495 equivalent finder
CSD2495 pdf lookup
CSD2495 substitution
CSD2495 replacement
