STD03N Datasheet, Equivalent, Cross Reference Search
Type Designator: STD03N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 160 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO-3P-5PIN
STD03N Transistor Equivalent Substitute - Cross-Reference Search
STD03N Datasheet (PDF)
std03n.pdf
Darlington Transistor with built-in compensation diodes STD03N March, 2006 Package--- MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03P Applications Audio output Equivalent circuit C(3)
stu03n20 std03n20.pdf
STU03N20GreenProductSTD03N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.3.28 @ VGS=10VTO-252 and TO-251 Package.200V 2A3.59 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (
std03p.pdf
Darlington Transistor with built-in compensation diodes STD03P March, 2006 Package ---MT-105 (TO3P 5-pin) Features High collector power dissipation: Pc=160W (with TO-3P) Low internal impedance by means of thinner die structure Built-in temperature compensation diode Complementary to STD03N Applications Audio output Equivalent circuit E(1)
stu03l01 std03l01.pdf
STU03L01GreenProductSTD03L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.0.9 @ VGS=10VTO-252 and TO-251 Package.100V 2A1.1 @ VGS=4.5V ESD Protected.GSSTU SERIESSTD SERIES( )TO - 252AA
stu03l07 std03l07.pdf
STU03L07GreenProductSTD03L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.228 @ VGS=10VTO-252 and TO-251 Package.70V 9A 267 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
