2SC4829 Datasheet and Replacement
Type Designator: 2SC4829
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-92MOD
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2SC4829 Datasheet (PDF)
2sc4829.pdf

2SC4829Silicon NPN EpitaxialApplicationHigh frequency amplifierFeatures High frequency characteristicsfT = 1100 MHz Typ High voltage and small output capacitanceVCEO = 100 V, Cob = 4.2 pF Typ Suitable for wide band video amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4829Ordering InformationhFE2SC4829B 60 to 1202SC4829C 100 to 20
2sa1852 2sc4826.pdf

Ordering number : ENN5495A2SA1852 / 2SC4826PNP / NPN Epitaxial Planar Silicon Transistors2SA1852 / 2SC4826High Definition CRT DisplayVideo Output ApplicationsApplicationsPackage Dimensions High definition CRT display video output,unit : mmwide-band amplifer.2084B[2SA1852 / 2SC4826]Features 4.51.9 2.610.51.2 1.4 Adoption of FBET process. High fT : fT=
2sc4827.pdf

Ordering number:EN4717PNP/NPN Epitaxial Planar Silicon Transistor2SA1853/2SC4827High Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output. Wide-unit:mmband amplifier.2084B[2SA1853/2SC4827]Features Adoption of FBET process. High fT : fT=300MHz. High breakdown voltage : VCEO=200V. Small
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CSD600D | RT1P44QC | MPSU01 | BF643W | MMS8550 | 2N2958S | UN9110S
Keywords - 2SC4829 transistor datasheet
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History: CSD600D | RT1P44QC | MPSU01 | BF643W | MMS8550 | 2N2958S | UN9110S



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