2SC4829 Datasheet. Specs and Replacement
Type Designator: 2SC4829 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-92MOD
2SC4829 Substitution
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2SC4829 datasheet
2SC4829 Silicon NPN Epitaxial Application High frequency amplifier Features High frequency characteristics fT = 1100 MHz Typ High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ Suitable for wide band video amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4829 Ordering Information hFE 2SC4829B 60 to 120 2SC4829C 100 to 20... See More ⇒
Ordering number ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, unit mm wide-band amplifer. 2084B [2SA1852 / 2SC4826] Features 4.5 1.9 2.6 10.5 1.2 1.4 Adoption of FBET process. High fT fT=... See More ⇒
Ordering number EN4717 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1853/2SC4827 High Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output. Wide- unit mm band amplifier. 2084B [2SA1853/2SC4827] Features Adoption of FBET process. High fT fT=300MHz. High breakdown voltage VCEO=200V. Small... See More ⇒
Detailed specifications: 2SC4808, 2SC4809, 2SC4810, 2SC4811, 2SC4813, 2SC4814, 2SC4815, 2SC4821, 2SC2240, 2SC4835, 2SC4836, 2SC4838, 2SC4839, 2SC4840, 2SC4841, 2SC4842, 2SC4843
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