All Transistors. 2SC5125 Datasheet

 

2SC5125 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC5125
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 170 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 17 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: T-40E

 2SC5125 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5125 Datasheet (PDF)

 8.1. Size:120K  1
2sc510 2sc512.pdf

2SC5125
2SC5125

 8.2. Size:210K  toshiba
2sc5129.pdf

2SC5125
2SC5125

 8.3. Size:171K  toshiba
2sc5122.pdf

2SC5125
2SC5125

 8.4. Size:59K  panasonic
2sc5128.pdf

2SC5125
2SC5125

Power Transistors2SC5128Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink with one screw

 8.5. Size:60K  panasonic
2sc5127.pdf

2SC5125
2SC5125

Power Transistors2SC5127, 2SC5127ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.

 8.6. Size:38K  panasonic
2sc5121.pdf

2SC5125
2SC5125

Power Transistors2SC5121Silicon NPN triple diffusion planar typeFor general amplificationUnit: mm+0.58.0 0.1 3.2 0.2FeaturesHigh collector to base voltage VCBO 3.16 0.1High collector to emitter VCEOSmall collector output capacitance CobTO-126 package, which is fitted to a heat sink without any insu-lation partsAbsolute Maximum Ratings (TC=25C)0.5 0.1

 8.7. Size:26K  hitachi
2sc5120.pdf

2SC5125
2SC5125

2SC5120Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 500 MHz typ High voltage and low output capacitanceVCEO = 150 V, Cob = 5.0 pF typ Suitable for wide band video amplifier 1231. Emitter2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

 8.8. Size:196K  jmnic
2sc5124.pdf

2SC5125
2SC5125

JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO

 8.9. Size:41K  jmnic
2sc5129.pdf

2SC5125
2SC5125

Product Specification www.jmnic.com Silicon Power Transistors 2SC5129 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS)

 8.10. Size:24K  sanken-ele
2sc5124.pdf

2SC5125

2SC5124Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SC5124 Unit Symbol Conditions 2SC5124 Unit0.20.2 5.515.6ICBO1 VCB=1200V A100m

 8.11. Size:189K  inchange semiconductor
2sc5124.pdf

2SC5125
2SC5125

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5124DESCRIPTIONSilicon NPN diffused planar transistorGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeABSOLUTE MAXIMUM RATINGS(T =2

 8.12. Size:180K  inchange semiconductor
2sc5129.pdf

2SC5125
2SC5125

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5129DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV.High speed switch

 8.13. Size:182K  inchange semiconductor
2sc5128.pdf

2SC5125
2SC5125

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5128DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 500V(Min)(BR)CEOHigh Speed SwitchingFull-pack package with outstanding insulation,which can be in staled to the heat sink with one screw100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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