2SC5125 Datasheet. Specs and Replacement

Type Designator: 2SC5125  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 170 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 17 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: T-40E

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2SC5125 datasheet

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2SC5125

Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one screw ... See More ⇒

Detailed specifications: 2SC5094, 2SC5097, 2SC5098, 2SC5104, 2SC5109, 2SC5110, 2SC5111, 2SC5121, 2N2907, 2SC5127, 2SC5127A, 2SC5136, 2SC5137, 2SC5138, 2SC5139, 2SC5140, 2SC5141

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