2SA1977 Datasheet. Specs and Replacement

Type Designator: 2SA1977  📄📄 

SMD Transistor Code: T92

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6000 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 3MM

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2SA1977 datasheet

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2SA1977

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSION (in millimeters) _ 2.8+0.2 High f T +0.1 f = 8.5 GHz TYP. T 1.5 0.65 0.15 High gain S 2 = 12.0 dB TYP. @f = 1.0 GHz, V = -8 V, I = -20 mA 21e CE C High-speed switching characterstics 2 Equivalent NPN transistor... See More ⇒

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2SA1977

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16... See More ⇒

Detailed specifications: 2SA1955, 2SA1960, 2SA1961, 2SA1963, 2SA1964, 2SA1965, 2SA1969, 2SA1973, BD139, 2SA1978, 2SA1979, 2SA1982, 2SA1989, 2SA1993, 2SA2004, 2SA2005, 2SA2007

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