CBSL100 Datasheet, Equivalent, Cross Reference Search
Type Designator: CBSL100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 310 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: FLG
CBSL100 Transistor Equivalent Substitute - Cross-Reference Search
CBSL100 Datasheet (PDF)
..1. Size:17K advanced-semi
cbsl100.pdf
cbsl100.pdf
CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
