All Transistors. CBSL100 Datasheet

 

CBSL100 Datasheet and Replacement


   Type Designator: CBSL100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 310 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: FLG
 

 CBSL100 Substitution

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CBSL100 Datasheet (PDF)

 ..1. Size:17K  advanced-semi
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CBSL100

CBSL100NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R(4X).060 RFEATURES: EMD Input Matching Network C .1925 F Omnigold Metalization System G H NI LK JMAXIMUM RATINGS MINIMUM MAXIMUMDIMinches / mm inches / mmIC 25 A .220 / 5.59 .230 / 5.

Datasheet: 2SD2651 , 2SD2659 , 2SD2663 , 2SD2678 , 2SD2679 , 2SD2687S , 2SD2688LS , 2SD2689LS , 2SA1837 , NESG2101M05 , NESG2101M16 , NESG210719 , NESG2107M33 , NESG250134 , NESG260234 , NESG270034 , NESG3031M05 .

History: DN0150BLP4 | RCS258 | HA7529 | KSC2755O | DTA115TET1G | BU208D | GS111C

Keywords - CBSL100 transistor datasheet

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