CBSL100 Specs and Replacement

Type Designator: CBSL100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 310 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: FLG

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CBSL100 datasheet

 ..1. Size:17K  advanced-semi

 cbsl100.pdf pdf_icon

CBSL100

CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) A .080x45 B FULL R (4X).060 R FEATURES E M D Input Matching Network C .1925 F Omnigold Metalization System G H N I L K J MAXIMUM RATINGS MINIMUM MAXIMUM DIM inches / mm inches / mm IC 25 A .220 / 5.59 .230 / 5.... See More ⇒

Detailed specifications: 2SD2651, 2SD2659, 2SD2663, 2SD2678, 2SD2679, 2SD2687S, 2SD2688LS, 2SD2689LS, MJE340, NESG2101M05, NESG2101M16, NESG210719, NESG2107M33, NESG250134, NESG260234, NESG270034, NESG3031M05

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