All Transistors. NESG4030M14 Datasheet

 

NESG4030M14 Datasheet and Replacement


   Type Designator: NESG4030M14
   SMD Transistor Code: zK
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.105 W
   Maximum Collector-Base Voltage |Vcb|: 5 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 27000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: M14
 

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NESG4030M14 Datasheet (PDF)

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NESG4030M14

NPN SILICON GERMANIUM C RF TRANSISTORNESG4030M14NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA,

Datasheet: NESG2107M33 , NESG250134 , NESG260234 , NESG270034 , NESG3031M05 , NESG3031M14 , NESG3032M14 , NESG3033M14 , 2SC945 , NESG2046M33 , NESG204619 , NESG2031M16 , NESG2031M05 , NESG2030M04 , NESG2021M16 , NESG2021M05 , 2N4910X .

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