NESG4030M14 Datasheet, Equivalent, Cross Reference Search
Type Designator: NESG4030M14
SMD Transistor Code: zK
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.105 W
Maximum Collector-Base Voltage |Vcb|: 5 V
Maximum Collector-Emitter Voltage |Vce|: 3 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 27000 MHz
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: M14
NESG4030M14 Transistor Equivalent Substitute - Cross-Reference Search
NESG4030M14 Datasheet (PDF)
..1. Size:206K nec
nesg4030m14.pdf
nesg4030m14.pdf
NPN SILICON GERMANIUM C RF TRANSISTORNESG4030M14NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA,
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
