NESG4030M14 Specs and Replacement

Type Designator: NESG4030M14

SMD Transistor Code: zK

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.105 W

Maximum Collector-Base Voltage |Vcb|: 5 V

Maximum Collector-Emitter Voltage |Vce|: 3 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 27000 MHz

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: M14

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NESG4030M14 datasheet

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NESG4030M14

NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, ... See More ⇒

Detailed specifications: NESG2107M33, NESG250134, NESG260234, NESG270034, NESG3031M05, NESG3031M14, NESG3032M14, NESG3033M14, TIP127, NESG2046M33, NESG204619, NESG2031M16, NESG2031M05, NESG2030M04, NESG2021M16, NESG2021M05, 2N4910X

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