FFB5551 Specs and Replacement
Type Designator: FFB5551
SMD Transistor Code: P1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC70-6
FFB5551 Substitution
- BJT ⓘ Cross-Reference Search
FFB5551 datasheet
FFB5551 E2 B2 Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers. C1 E1 is Pin 1. C2 B1 E1 SC70-6 Mark .P1 Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector Curr... See More ⇒
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Detailed specifications: FFB2227A, FMB2227A, FFB3904, FMB3904, FFB3906, FMB3906, FFB3946, FMB3946, 2SC828, FJA3835, FJAF4210, FJAF4310, FJC1308, FJC1386, FJC1963, FJC2383, FJC690
Keywords - FFB5551 pdf specs
FFB5551 cross reference
FFB5551 equivalent finder
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