FFB5551 Datasheet, Equivalent, Cross Reference Search
Type Designator: FFB5551
SMD Transistor Code: P1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC70-6
FFB5551 Transistor Equivalent Substitute - Cross-Reference Search
FFB5551 Datasheet (PDF)
ffb5551.pdf
FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers.C1 E1 is Pin 1.C2B1E1SC70-6Mark: .P1Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector Curr
ffb5551.pdf
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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: FJA4310
