All Transistors. FFB5551 Datasheet

 

FFB5551 Datasheet and Replacement


   Type Designator: FFB5551
   SMD Transistor Code: P1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC70-6
 
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FFB5551 Datasheet (PDF)

 ..1. Size:112K  fairchild semi
 ffb5551.pdf pdf_icon

FFB5551

FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purpose high voltage amplifiers.C1 E1 is Pin 1.C2B1E1SC70-6Mark: .P1Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6.0 VIC Collector Curr

 ..2. Size:314K  onsemi
 ffb5551.pdf pdf_icon

FFB5551

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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