All Transistors. FJC1386 Datasheet

 

FJC1386 Datasheet and Replacement


   Type Designator: FJC1386
   SMD Transistor Code: FAP_FAQ_FAR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-89
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FJC1386 Datasheet (PDF)

 ..1. Size:439K  fairchild semi
 fjc1386.pdf pdf_icon

FJC1386

July 2005FJC1386PNP Epitaxial Silicon TransistorLow Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 8 6P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value Uni

 9.1. Size:441K  fairchild semi
 fjc1308.pdf pdf_icon

FJC1386

July 2005FJC1308PNP Epitaxial Silicon TransistorAudio Power Amplifier Applications Complement to FJC1963 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 0 8P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BU3150BF | 2SC5310 | SX37010 | 2SD575L | BU106 | 2SA1980UF | 2SC1249

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