All Transistors. FJC1963 Datasheet

 

FJC1963 Datasheet and Replacement


   Type Designator: FJC1963
   SMD Transistor Code: FCQ_FCR_FCS
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-89
 

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FJC1963 Datasheet (PDF)

 ..1. Size:110K  fairchild semi
 fjc1963.pdf pdf_icon

FJC1963

June 2009FJC1963NPN Epitaxial Silicon TransistorFeatures Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 9 6 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value U

Datasheet: FFB3946 , FMB3946 , FFB5551 , FJA3835 , FJAF4210 , FJAF4310 , FJC1308 , FJC1386 , BD136 , FJC2383 , FJC690 , FJC790 , FJMA790 , FJN13003 , FJN3301R , FJN3302R , FJN3303 .

History: KSA1156Y | KSA1156 | TN3866 | TEC9011I | PBSS2515YPN | ST2SD1664U | 2SD604

Keywords - FJC1963 transistor datasheet

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