FJC1963 Specs and Replacement

Type Designator: FJC1963

SMD Transistor Code: FCQ_FCR_FCS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-89

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FJC1963 datasheet

 ..1. Size:110K  fairchild semi

 fjc1963.pdf pdf_icon

FJC1963

June 2009 FJC1963 NPN Epitaxial Silicon Transistor Features Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒

Detailed specifications: FFB3946, FMB3946, FFB5551, FJA3835, FJAF4210, FJAF4310, FJC1308, FJC1386, BD136, FJC2383, FJC690, FJC790, FJMA790, FJN13003, FJN3301R, FJN3302R, FJN3303

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