FJC1963 Datasheet and Replacement
Type Designator: FJC1963
SMD Transistor Code: FCQ_FCR_FCS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-89
FJC1963 Datasheet (PDF)
fjc1963.pdf

June 2009FJC1963NPN Epitaxial Silicon TransistorFeatures Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 9 6 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC5541 | GES4928 | 2SB1184R | SUR544J | 2SC74 | 2SC3991K
Keywords - FJC1963 transistor datasheet
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History: 2SC5541 | GES4928 | 2SB1184R | SUR544J | 2SC74 | 2SC3991K



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