FJN13003 Specs and Replacement
Type Designator: FJN13003
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 9
Package: TO92
FJN13003 Substitution
- BJT ⓘ Cross-Reference Search
FJN13003 datasheet
FJN13003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W TO-92 1 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Volta... See More ⇒
Detailed specifications: FJAF4310, FJC1308, FJC1386, FJC1963, FJC2383, FJC690, FJC790, FJMA790, BD333, FJN3301R, FJN3302R, FJN3303, FJN3303R, FJN3304R, FJN3305R, FJN3306R, FJN3307R
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