FJN13003 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJN13003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 9
Noise Figure, dB: -
Package: TO-92
FJN13003 Transistor Equivalent Substitute - Cross-Reference Search
FJN13003 Datasheet (PDF)
..1. Size:49K fairchild semi
fjn13003.pdf
fjn13003.pdf
FJN13003High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21WTO-9211. Emitter 2. Collector 3.BaseNPN Silicon Transistor Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
