All Transistors. FJN965 Datasheet

 

FJN965 Datasheet and Replacement


   Type Designator: FJN965
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 23 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: TO-92
 

 FJN965 Substitution

   - BJT ⓘ Cross-Reference Search

   

FJN965 Datasheet (PDF)

 ..1. Size:83K  fairchild semi
 fjn965.pdf pdf_icon

FJN965

FJN965For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply VoltageTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-

Datasheet: FJN4308R , FJN4309R , FJN4310R , FJN4311R , FJN4312R , FJN4313R , FJN4314R , FJN5471 , 2SD1047 , FJNS3201R , FJNS3202R , FJNS3203R , FJNS3204R , FJNS3205R , FJNS3206R , FJNS3207R , FJNS3208R .

Keywords - FJN965 transistor datasheet

 FJN965 cross reference
 FJN965 equivalent finder
 FJN965 lookup
 FJN965 substitution
 FJN965 replacement

 

 
Back to Top

 


 
.