FJN965 Specs and Replacement
Type Designator: FJN965
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 23 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Package: TO-92
FJN965 Substitution
- BJT ⓘ Cross-Reference Search
FJN965 datasheet
FJN965 For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-... See More ⇒
Detailed specifications: FJN4308R, FJN4309R, FJN4310R, FJN4311R, FJN4312R, FJN4313R, FJN4314R, FJN5471, 2N2222A, FJNS3201R, FJNS3202R, FJNS3203R, FJNS3204R, FJNS3205R, FJNS3206R, FJNS3207R, FJNS3208R
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