FJNS3211R Specs and Replacement
Type Designator: FJNS3211R
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92S
FJNS3211R Transistor Equivalent Substitute - Cross-Reference Search
FJNS3211R detailed specifications
fjns3211r.pdf
FJNS3211R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJNS4211R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collecto... See More ⇒
fjns3212r.pdf
FJNS3212R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJNS4212R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collecto... See More ⇒
fjns3213r.pdf
FJNS3213R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to FJNS4213R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C ... See More ⇒
fjns3210r.pdf
FJNS3210R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJNS4210R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector... See More ⇒
Detailed specifications: FJNS3202R , FJNS3203R , FJNS3204R , FJNS3205R , FJNS3206R , FJNS3207R , FJNS3208R , FJNS3210R , MJE340 , FJNS3212R , FJNS3213R , FJNS3214R , FJNS3215R , FJNS4201R , FJNS4202R , FJNS4203R , FJNS4204R .
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