All Transistors. FJNS3211R Datasheet

 

FJNS3211R Datasheet, Equivalent, Cross Reference Search

Type Designator: FJNS3211R

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92S

FJNS3211R Transistor Equivalent Substitute - Cross-Reference Search

 

FJNS3211R Datasheet (PDF)

1.1. fjns3211r.pdf Size:26K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3211R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K?) Complement to FJNS4211R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Volta

3.1. fjns3210r.pdf Size:32K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3210R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K?) Complement to FJNS4210R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltag

3.2. fjns3213r.pdf Size:27K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3213R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K?, R2=47K?) Complement to FJNS4213R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collecto

 3.3. fjns3214r.pdf Size:28K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3214R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJNS4214R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collecto

3.4. fjns3215r.pdf Size:36K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3215R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K?, R2=10K?) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage 50 V VCEO Co

 3.5. fjns3212r.pdf Size:26K _fairchild_semi

FJNS3211R
FJNS3211R

FJNS3212R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K?) Complement to FJNS4212R TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Volta

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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