All Transistors. FJP9100 Datasheet

 

FJP9100 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJP9100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 275 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-220

 FJP9100 Transistor Equivalent Substitute - Cross-Reference Search

   

FJP9100 Datasheet (PDF)

 ..1. Size:70K  fairchild semi
 fjp9100.pdf

FJP9100 FJP9100

FJP9100High Voltage Power Darlington Transistor Built-in Resistor at Base-Emitter : R1(Typ.)=2000 Built-in Resistor at Base : RB(Typ.)=700 100TO-22011.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Co

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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