All Transistors. FJP9100 Datasheet

 

FJP9100 Datasheet and Replacement


   Type Designator: FJP9100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 275 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-220
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FJP9100 Datasheet (PDF)

 ..1. Size:70K  fairchild semi
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FJP9100

FJP9100High Voltage Power Darlington Transistor Built-in Resistor at Base-Emitter : R1(Typ.)=2000 Built-in Resistor at Base : RB(Typ.)=700 100TO-22011.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Co

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB744A | BDW24 | MMBT3906HE3 | BC847RA | 2N332A | 2N2874 | 2SD537

Keywords - FJP9100 transistor datasheet

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