All Transistors. FJP9100 Datasheet

 

FJP9100 Datasheet and Replacement


   Type Designator: FJP9100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 275 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-220
 
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FJP9100 Datasheet (PDF)

 ..1. Size:70K  fairchild semi
 fjp9100.pdf pdf_icon

FJP9100

FJP9100High Voltage Power Darlington Transistor Built-in Resistor at Base-Emitter : R1(Typ.)=2000 Built-in Resistor at Base : RB(Typ.)=700 100TO-22011.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Co

Datasheet: FJNS4208R , FJNS4210R , FJNS4211R , FJNS4212R , FJNS4213R , FJNS4214R , FJP5321 , FJP5355 , 13005 , FJPF5321 , FJPF9020 , FJT44 , FJV1845 , FJV3101R , FJV3102R , FJV3103R , FJV3104R .

History: KT220V9

Keywords - FJP9100 transistor datasheet

 FJP9100 cross reference
 FJP9100 equivalent finder
 FJP9100 lookup
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