FJP9100 Specs and Replacement
Type Designator: FJP9100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 275 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-220
FJP9100 Substitution
FJP9100 datasheet
fjp9100.pdf
FJP9100 High Voltage Power Darlington Transistor Built-in Resistor at Base-Emitter R1(Typ.)=2000 Built-in Resistor at Base RB(Typ.)=700 100 TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Co... See More ⇒
Detailed specifications: FJNS4208R , FJNS4210R , FJNS4211R , FJNS4212R , FJNS4213R , FJNS4214R , FJP5321 , FJP5355 , C3198 , FJPF5321 , FJPF9020 , FJT44 , FJV1845 , FJV3101R , FJV3102R , FJV3103R , FJV3104R .
Keywords - FJP9100 pdf specs
FJP9100 cross reference
FJP9100 equivalent finder
FJP9100 pdf lookup
FJP9100 substitution
FJP9100 replacement
