2N6317 Datasheet. Specs and Replacement
Type Designator: 2N6317 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO66
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2N6317 datasheet
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6315/6316 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collecto... See More ⇒
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf ![]()
A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector A... See More ⇒
Detailed specifications: 2N6309, 2N631, 2N6310, 2N6311, 2N6312, 2N6313, 2N6314, 2N6315, B647, 2N6318, 2N6319, 2N632, 2N6320, 2N6321, 2N6322, 2N6323, 2N6324
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BJT Parameters and How They Relate
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