FJX1182 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJX1182
SMD Transistor Code: SDO_SDY
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-323
FJX1182 Transistor Equivalent Substitute - Cross-Reference Search
FJX1182 Datasheet (PDF)
..1. Size:44K fairchild semi
fjx1182.pdf
fjx1182.pdf
FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -35 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Collector Power Dissipation 150 mWTJ Junc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
