All Transistors. FMB200 Datasheet

 

FMB200 Datasheet and Replacement


   Type Designator: FMB200
   SMD Transistor Code: N2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SSOT-6
 

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FMB200 Datasheet (PDF)

 ..1. Size:56K  fairchild semi
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FMB200

FMB200C2E1C1B2E2pin #1 B1SuperSOT-6Mark: .N2Dot denotes pin #1PNP Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MJ3521 | BTA3513J3 | 2SC5725

Keywords - FMB200 transistor datasheet

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