FMB200 Specs and Replacement
Type Designator: FMB200
SMD Transistor Code: N2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SSOT-6
FMB200 Substitution
- BJT ⓘ Cross-Reference Search
FMB200 datasheet
FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT -6 Mark .N2 Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-... See More ⇒
Detailed specifications: FJY4009R, FJY4010R, FJY4011R, FJY4012R, FJY4013R, FJY4014R, FJYF2906, FMB100, 2SB817, FMB5551, FMB857B, FMBA06, FMBA14, FMBA56, FMBM5401, FMBM5551, FMBS5401
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