FMB200 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMB200
SMD Transistor Code: N2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
FMB200 Transistor Equivalent Substitute - Cross-Reference Search
FMB200 Datasheet (PDF)
..1. Size:56K fairchild semi
fmb200.pdf
fmb200.pdf
FMB200C2E1C1B2E2pin #1 B1SuperSOT-6Mark: .N2Dot denotes pin #1PNP Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
