All Transistors. FMB857B Datasheet

 

FMB857B Datasheet and Replacement


   Type Designator: FMB857B
   SMD Transistor Code: N2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SSOT-6
 
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FMB857B Datasheet (PDF)

 ..1. Size:94K  fairchild semi
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FMB857B

September 2007FMB857BPNP Epitaxial Silicon Transistor This device is designed for general purpose amplifier application at collector currents to 300mA. Sourced from process 68.C2E1C1SSOT-6B2 Mark: .N2 pin #1 E2 Dot denotes pin #1B1Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VVCEO Collector

Datasheet: FJY4011R , FJY4012R , FJY4013R , FJY4014R , FJYF2906 , FMB100 , FMB200 , FMB5551 , 8550 , FMBA06 , FMBA14 , FMBA56 , FMBM5401 , FMBM5551 , FMBS5401 , FMBS549 , FMBS5551 .

History: 2N846B

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