FMB857B Specs and Replacement

Type Designator: FMB857B

SMD Transistor Code: N2

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SSOT-6

 FMB857B Substitution

- BJT ⓘ Cross-Reference Search

 

FMB857B datasheet

 ..1. Size:94K  fairchild semi

 fmb857b.pdf pdf_icon

FMB857B

September 2007 FMB857B PNP Epitaxial Silicon Transistor This device is designed for general purpose amplifier application at collector currents to 300mA. Sourced from process 68. C2 E1 C1 SSOT-6 B2 Mark .N2 pin #1 E2 Dot denotes pin #1 B1 Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector... See More ⇒

Detailed specifications: FJY4011R, FJY4012R, FJY4013R, FJY4014R, FJYF2906, FMB100, FMB200, FMB5551, 2SC2655, FMBA06, FMBA14, FMBA56, FMBM5401, FMBM5551, FMBS5401, FMBS549, FMBS5551

Keywords - FMB857B pdf specs

 FMB857B cross reference

 FMB857B equivalent finder

 FMB857B pdf lookup

 FMB857B substitution

 FMB857B replacement