2N6326 Datasheet. Specs and Replacement
Type Designator: 2N6326 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 6
Package: TO3
📄📄 Copy
2N6326 Substitution
- BJT ⓘ Cross-Reference Search
2N6326 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute... See More ⇒
Detailed specifications: 2N6319, 2N632, 2N6320, 2N6321, 2N6322, 2N6323, 2N6324, 2N6325, 2N3904, 2N6327, 2N6328, 2N6329, 2N633, 2N6330, 2N6331, 2N6338, 2N6338A
Keywords - 2N6326 pdf specs
2N6326 cross reference
2N6326 equivalent finder
2N6326 pdf lookup
2N6326 substitution
2N6326 replacement
BJT Parameters and How They Relate
History: BFW66 | 2N3834 | 2SA1980E | NTE261 | TI3034 | 2N6379 | BC308C
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor | bu2508df



