FMBM5551 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMBM5551
SMD Transistor Code: 3S2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SSOT-6
FMBM5551 Transistor Equivalent Substitute - Cross-Reference Search
FMBM5551 Datasheet (PDF)
fmbm5551.pdf
September 2008FMBM5551 NPN General Purpose Amplifier This device has matched dies Sourced from process 16. See MMBT5551 for characteristicsC2E1C1B2E2B1pin #1SuperSOTTM-6Mark: .3S2Dot denotes pin #1Absolute Maximum Ratings *Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Voltage 6
fmbm5401.pdf
FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6.C2E1C1B2E2B1pin #1SuperSOTTM-6Mark: .4S2Absolute Maximum Ratings*Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Base Voltage -5.0 VIC Collector Current - Continuous -600 mATJ, TSTG Operating and Storage Junction
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
