FMBSA56 Datasheet and Replacement
Type Designator: FMBSA56
SMD Transistor Code: 2G1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-6
FMBSA56 Datasheet (PDF)
fmbsa56.pdf

FMBSA56NCPNP General Purpose AmplifierC1 This device is designed for general purpose amplifier applications at Ecollector currents to 300 mA. Sourced from Process 73.BCCpin #1SuperSOTTM-6 singleMark: .2G1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -80 VVCBO Collector-Base Voltage -80
fmbsa06.pdf

FMBSA06NCNPN General Purpose AmplifierC1 This device is designed for general purpose amplifier applications at Ecollector currents to 300 mA. Sourced from Process 12.BCCpin #1SuperSOTTM-6 singleMark: .1G1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 V
Datasheet: FMBA14 , FMBA56 , FMBM5401 , FMBM5551 , FMBS5401 , FMBS549 , FMBS5551 , FMBSA06 , 2SD669 , FPN330 , FPN330A , FPN430 , FPN430A , FPN530 , FPN530A , FPN560 , FPN560A .
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