FMBSA56 Specs and Replacement
Type Designator: FMBSA56
SMD Transistor Code: 2G1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SSOT-6
FMBSA56 Substitution
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FMBSA56 datasheet
FMBSA56 NC PNP General Purpose Amplifier C1 This device is designed for general purpose amplifier applications at E collector currents to 300 mA. Sourced from Process 73. B C C pin #1 SuperSOTTM-6 single Mark .2G1 Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -80 V VCBO Collector-Base Voltage -80... See More ⇒
FMBSA06 NC NPN General Purpose Amplifier C1 This device is designed for general purpose amplifier applications at E collector currents to 300 mA. Sourced from Process 12. B C C pin #1 SuperSOTTM-6 single Mark .1G1 Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V... See More ⇒
Detailed specifications: FMBA14, FMBA56, FMBM5401, FMBM5551, FMBS5401, FMBS549, FMBS5551, FMBSA06, TIP2955, FPN330, FPN330A, FPN430, FPN430A, FPN530, FPN530A, FPN560, FPN560A
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